b a t54/a/c/s b a t54, re v . c ? 2001 fairchild semiconductor corporation schottky diodes bat54/a/c/s absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics symbol parameter value units v rrm maximum repetitive reverse voltage 30 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second 600 ma t stg storage temperature range -55 to +150 c t j operating junction temperature 150 c electrical characteristics t a = 25c unless otherwise noted symbol parameter value units p d power dissipation 290 mw r ja thermal resistance, junction to ambient 430 c/w symbol parameter test conditions min max units v r breakdown voltage i r = 10 a 30 v v f forward voltage i f = 0.1 ma i f = 1 ma i f = 10 ma i f = 30 ma i f = 100 ma 240 320 400 500 1.0 mv mv mv mv v i r reverse current v r =25 v 2 a c t total capacitance v r = 1v, f = 1.0 mhz 10 pf t rr reverse recovery time i f = i r = 10 ma, i rr = 1.0 ma, r l = 100 ? 5.0 ns marking bat54 = l4p bat54a = l42 bat54c = l43 bat54s = l44 1 2 3 l4p 3 1 2 sot-23 connection diagrams bat54 bat54c 1 3 21 3 3 bat54a bat54s 22 3 11 2nc
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